Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack
10.1143/JJAP.47.2548
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sg-nus-scholar.10635-829412023-10-29T22:24:28Z Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack Li, R. Sung-Joo, L.E.E. Hong, M.-H. Chi, D.-Z. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Ge MOSFET Germanide High-k dielectric Laser annealing Schottky 10.1143/JJAP.47.2548 Japanese Journal of Applied Physics 47 4 PART 2 2548-2550 JAPND 2014-10-07T04:35:20Z 2014-10-07T04:35:20Z 2008-04-25 Article Li, R., Sung-Joo, L.E.E., Hong, M.-H., Chi, D.-Z., Kwong, D.-L. (2008-04-25). Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack. Japanese Journal of Applied Physics 47 (4 PART 2) : 2548-2550. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2548 00214922 http://scholarbank.nus.edu.sg/handle/10635/82941 000255449100045 Scopus |
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Singapore Singapore |
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Ge MOSFET Germanide High-k dielectric Laser annealing Schottky |
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Ge MOSFET Germanide High-k dielectric Laser annealing Schottky Li, R. Sung-Joo, L.E.E. Hong, M.-H. Chi, D.-Z. Kwong, D.-L. Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack |
| description |
10.1143/JJAP.47.2548 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Li, R. Sung-Joo, L.E.E. Hong, M.-H. Chi, D.-Z. Kwong, D.-L. |
| format |
Article |
| author |
Li, R. Sung-Joo, L.E.E. Hong, M.-H. Chi, D.-Z. Kwong, D.-L. |
| author_sort |
Li, R. |
| title |
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack |
| title_short |
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack |
| title_full |
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack |
| title_fullStr |
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack |
| title_full_unstemmed |
Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stack |
| title_sort |
pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with tan/chemical vapor deposition hfo2/ge gate stack |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82941 |
| _version_ |
1781784257480359936 |