Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate

10.1109/IWJT.2007.4279953

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Main Authors: Gao, F., Li, R., Chi, D.Z., Balakumar, S., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83946
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-839462024-11-10T21:13:30Z Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate Gao, F. Li, R. Chi, D.Z. Balakumar, S. Lee, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IWJT.2007.4279953 Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 77-80 2014-10-07T04:47:01Z 2014-10-07T04:47:01Z 2007 Conference Paper Gao, F.,Li, R.,Chi, D.Z.,Balakumar, S.,Lee, S.J. (2007). Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate. Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 : 77-80. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IWJT.2007.4279953" target="_blank">https://doi.org/10.1109/IWJT.2007.4279953</a> 1424411033 http://scholarbank.nus.edu.sg/handle/10635/83946 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/IWJT.2007.4279953
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Gao, F.
Li, R.
Chi, D.Z.
Balakumar, S.
Lee, S.J.
format Conference or Workshop Item
author Gao, F.
Li, R.
Chi, D.Z.
Balakumar, S.
Lee, S.J.
spellingShingle Gao, F.
Li, R.
Chi, D.Z.
Balakumar, S.
Lee, S.J.
Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
author_sort Gao, F.
title Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
title_short Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
title_full Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
title_fullStr Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
title_full_unstemmed Metal-germanide Schottky source/drain transistor with high-k/metal gate stack on Ge and Si0.05Ge0.95/Si substrate
title_sort metal-germanide schottky source/drain transistor with high-k/metal gate stack on ge and si0.05ge0.95/si substrate
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83946
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