Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

10.1109/IEDM.2008.4796705

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Bibliographic Details
Main Authors:	Lin, J., Lee, S., Oh, H.-J., Yang, W., Lo, G.Q., Kwong, D.L., Chi, D.Z.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84101
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84101
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spelling	sg-nus-scholar.10635-841012015-02-11T13:30:27Z Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack Lin, J. Lee, S. Oh, H.-J. Yang, W. Lo, G.Q. Kwong, D.L. Chi, D.Z. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2008.4796705 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:48:48Z 2014-10-07T04:48:48Z 2008 Conference Paper Lin, J.,Lee, S.,Oh, H.-J.,Yang, W.,Lo, G.Q.,Kwong, D.L.,Chi, D.Z. (2008). Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2008.4796705" target="_blank">https://doi.org/10.1109/IEDM.2008.4796705</a> 9781424423781 01631918 http://scholarbank.nus.edu.sg/handle/10635/84101 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2008.4796705
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lin, J. Lee, S. Oh, H.-J. Yang, W. Lo, G.Q. Kwong, D.L. Chi, D.Z.
format	Conference or Workshop Item
author	Lin, J. Lee, S. Oh, H.-J. Yang, W. Lo, G.Q. Kwong, D.L. Chi, D.Z.
spellingShingle	Lin, J. Lee, S. Oh, H.-J. Yang, W. Lo, G.Q. Kwong, D.L. Chi, D.Z. Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
author_sort	Lin, J.
title	Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
title_short	Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
title_full	Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
title_fullStr	Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
title_full_unstemmed	Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
title_sort	plasma ph3-passivated high mobility inversion ingaas mosfet fabricated with self-aligned gate-first process and hfo2/tan gate stack
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84101
_version_	1681089557170225152

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

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