Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition

10.1109/LED.2009.2029125

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Bibliographic Details
Main Authors:	Wang, J., Zang, H., Yu, M.B., Xiong, Y.Z., Lo, G.Q., Kwong, D.L., Lee, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Germanium Junction field-effect transistor (JFET) Photodetector
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82288
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82288
record_format	dspace
spelling	sg-nus-scholar.10635-822882023-10-31T20:25:06Z Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition Wang, J. Zang, H. Yu, M.B. Xiong, Y.Z. Lo, G.Q. Kwong, D.L. Lee, S.J. ELECTRICAL & COMPUTER ENGINEERING INSTITUTE OF MICROELECTRONICS Germanium Junction field-effect transistor (JFET) Photodetector 10.1109/LED.2009.2029125 IEEE Electron Device Letters 30 10 1066-1068 EDLED 2014-10-07T04:27:37Z 2014-10-07T04:27:37Z 2009-10 Article Wang, J., Zang, H., Yu, M.B., Xiong, Y.Z., Lo, G.Q., Kwong, D.L., Lee, S.J. (2009-10). Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition. IEEE Electron Device Letters 30 (10) : 1066-1068. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2029125 07413106 http://scholarbank.nus.edu.sg/handle/10635/82288 000270227600018 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Germanium Junction field-effect transistor (JFET) Photodetector
spellingShingle	Germanium Junction field-effect transistor (JFET) Photodetector Wang, J. Zang, H. Yu, M.B. Xiong, Y.Z. Lo, G.Q. Kwong, D.L. Lee, S.J. Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
description	10.1109/LED.2009.2029125
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, J. Zang, H. Yu, M.B. Xiong, Y.Z. Lo, G.Q. Kwong, D.L. Lee, S.J.
format	Article
author	Wang, J. Zang, H. Yu, M.B. Xiong, Y.Z. Lo, G.Q. Kwong, D.L. Lee, S.J.
author_sort	Wang, J.
title	Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
title_short	Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
title_full	Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
title_fullStr	Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
title_full_unstemmed	Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
title_sort	enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82288
_version_	1781784100825202688

Enhanced sensitivity of small-size (with 1-μm gate length) junction-field-effect-transistor-based germanium photodetector using two-step germanium epitaxy by ultrahigh vacuum chemical vapor deposition

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