Tunneling field-effect transistor: Effect of strain and temperature on tunneling current

• Main Authors: Guo, P.-F., Yang, L.-T., Yang, Y., Fan, L., Han, G.-Q., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Double gate; Strain; Temperature; Tunneling; Tunneling field-effect transistor (TFET)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83232
• Institution: National University of Singapore

10.1109/LED.2009.2026296