Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium source

10.1143/JJAP.47.2593

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Sylvester, D., Heng, C.-H., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Double-gate Silicon- germanium Subthreshold swing TFET Tunneling
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55624
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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