Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

• Main Authors: Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K., Choi, W.K., Du, A.Y., Tung, C.H.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Charge retention; Charge storage; Germanium nanocrystals; High-κ tunnel dielectric; Memory device
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82330
• 機構: National University of Singapore

10.1016/j.tsf.2004.05.046