Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

10.1016/j.tsf.2004.05.046

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Bibliographic Details
Main Authors: Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K., Choi, W.K., Du, A.Y., Tung, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge retention
Charge storage
Germanium nanocrystals
High-κ tunnel dielectric
Memory device
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82330
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Institution: National University of Singapore

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