Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

10.1016/j.tsf.2004.05.046

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Bibliographic Details
Main Authors:	Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K., Choi, W.K., Du, A.Y., Tung, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Charge retention Charge storage Germanium nanocrystals High-κ tunnel dielectric Memory device
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82330
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82330
record_format	dspace
spelling	sg-nus-scholar.10635-823302024-11-14T10:20:36Z Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric Ng, T.H. Ho, V. Teo, L.W. Tay, M.S. Koh, B.H. Chim, W.K. Choi, W.K. Du, A.Y. Tung, C.H. ELECTRICAL & COMPUTER ENGINEERING Charge retention Charge storage Germanium nanocrystals High-κ tunnel dielectric Memory device 10.1016/j.tsf.2004.05.046 Thin Solid Films 462-463 SPEC. ISS. 46-50 THSFA 2014-10-07T04:28:06Z 2014-10-07T04:28:06Z 2004-09 Article Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K., Choi, W.K., Du, A.Y., Tung, C.H. (2004-09). Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric. Thin Solid Films 462-463 (SPEC. ISS.) : 46-50. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.046 00406090 http://scholarbank.nus.edu.sg/handle/10635/82330 000223812800011 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Charge retention Charge storage Germanium nanocrystals High-κ tunnel dielectric Memory device
spellingShingle	Charge retention Charge storage Germanium nanocrystals High-κ tunnel dielectric Memory device Ng, T.H. Ho, V. Teo, L.W. Tay, M.S. Koh, B.H. Chim, W.K. Choi, W.K. Du, A.Y. Tung, C.H. Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
description	10.1016/j.tsf.2004.05.046
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ng, T.H. Ho, V. Teo, L.W. Tay, M.S. Koh, B.H. Chim, W.K. Choi, W.K. Du, A.Y. Tung, C.H.
format	Article
author	Ng, T.H. Ho, V. Teo, L.W. Tay, M.S. Koh, B.H. Chim, W.K. Choi, W.K. Du, A.Y. Tung, C.H.
author_sort	Ng, T.H.
title	Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
title_short	Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
title_full	Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
title_fullStr	Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
title_full_unstemmed	Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
title_sort	fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82330
_version_	1821189366917103616

Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

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