Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide

by Chim, W.K., Zheng, J.X., Koh, B.H.
Published 2014

Quantum mechanical modeling of gate capacitance and gate current in tunnel dielectric stack structures for nonvolatile memory application

by Koh, B.H., Chim, W.K., Ng, T.H., Zheng, J.X., Choi, W.K.
Published 2014

Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

by Koh, B.H., Ng, T.H., Zheng, J.X., Chim, W.K., Choi, W.K.
Published 2014

Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms

by Chim, W.K., Ng, T.H., Koh, B.H., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y.
Published 2014

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

by Ng, T.H., Koh, B.H., Chim, W.K., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y.
Published 2014

Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

by Ng, T.H., Ho, V., Teo, L.W., Tay, M.S., Koh, B.H., Chim, W.K., Choi, W.K., Du, A.Y., Tung, C.H.
Published 2014