First-principles study on the concentrations of native point defects in high-dielectric-constant binary oxide materials

by Zheng, J.X., Ceder, G., Chim, W.K.
Published 2014

Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide

by Chim, W.K., Zheng, J.X., Koh, B.H.
Published 2014

Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

by Zheng, J.X., Ceder, G., Maxisch, T., Chim, W.K., Choi, W.K.
Published 2014

First-principles study of native point defects in hafnia and zirconia

by Zheng, J.X., Ceder, G., Maxisch, T., Chim, W.K., Choi, W.K.
Published 2014

Quantum mechanical modeling of capacitance and gate current for MIS structures using zirconium dioxide as the gate dielectric

by Koh, B.H., Ng, T.H., Zheng, J.X., Chim, W.K., Choi, W.K.
Published 2014

Quantum mechanical modeling of gate capacitance and gate current in tunnel dielectric stack structures for nonvolatile memory application

by Koh, B.H., Chim, W.K., Ng, T.H., Zheng, J.X., Choi, W.K.
Published 2014

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms

by Ng, T.H., Koh, B.H., Chim, W.K., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y.
Published 2014

Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms

by Chim, W.K., Ng, T.H., Koh, B.H., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y.
Published 2014