Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

10.1103/PhysRevB.73.104101

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Bibliographic Details
Main Authors: Zheng, J.X., Ceder, G., Maxisch, T., Chim, W.K., Choi, W.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56769
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56769

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