Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

10.1103/PhysRevB.73.104101

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Main Authors:	Zheng, J.X., Ceder, G., Maxisch, T., Chim, W.K., Choi, W.K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56769
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-567692023-10-30T22:12:50Z Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study Zheng, J.X. Ceder, G. Maxisch, T. Chim, W.K. Choi, W.K. ELECTRICAL & COMPUTER ENGINEERING 10.1103/PhysRevB.73.104101 Physical Review B - Condensed Matter and Materials Physics 73 10 - PRBMD 2014-06-17T02:58:25Z 2014-06-17T02:58:25Z 2006 Article Zheng, J.X., Ceder, G., Maxisch, T., Chim, W.K., Choi, W.K. (2006). Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study. Physical Review B - Condensed Matter and Materials Physics 73 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.73.104101 10980121 http://scholarbank.nus.edu.sg/handle/10635/56769 000236467200017 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1103/PhysRevB.73.104101
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zheng, J.X. Ceder, G. Maxisch, T. Chim, W.K. Choi, W.K.
format	Article
author	Zheng, J.X. Ceder, G. Maxisch, T. Chim, W.K. Choi, W.K.
spellingShingle	Zheng, J.X. Ceder, G. Maxisch, T. Chim, W.K. Choi, W.K. Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
author_sort	Zheng, J.X.
title	Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
title_short	Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
title_full	Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
title_fullStr	Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
title_full_unstemmed	Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
title_sort	native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: first-principles study
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56769
_version_	1781781275863941120

Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

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