Electrical characterization of a trilayer germanium nanocrystal memory device

10.1016/S0167-9317(03)00021-2

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Bibliographic Details
Main Authors:	Ho, V., Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Capacitance-voltage ( C-V ) Germanium Memory Nanocrystal
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70123
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Institution:	National University of Singapore

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