Electrical characterization of a trilayer germanium nanocrystal memory device

10.1016/S0167-9317(03)00021-2

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Bibliographic Details
Main Authors:	Ho, V., Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Capacitance-voltage ( C-V ) Germanium Memory Nanocrystal
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70123
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70123
record_format	dspace
spelling	sg-nus-scholar.10635-701232023-10-30T07:46:07Z Electrical characterization of a trilayer germanium nanocrystal memory device Ho, V. Tay, M.S. Moey, C.H. Teo, L.W. Choi, W.K. Chim, W.K. Heng, C.L. Lei, Y. ELECTRICAL & COMPUTER ENGINEERING Capacitance-voltage ( C-V ) Germanium Memory Nanocrystal 10.1016/S0167-9317(03)00021-2 Microelectronic Engineering 66 1-4 33-38 MIENE 2014-06-19T03:08:31Z 2014-06-19T03:08:31Z 2003-04 Conference Paper Ho, V., Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y. (2003-04). Electrical characterization of a trilayer germanium nanocrystal memory device. Microelectronic Engineering 66 (1-4) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1016/S0167-9317(03)00021-2 01679317 http://scholarbank.nus.edu.sg/handle/10635/70123 000182725500006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Capacitance-voltage ( C-V ) Germanium Memory Nanocrystal
spellingShingle	Capacitance-voltage ( C-V ) Germanium Memory Nanocrystal Ho, V. Tay, M.S. Moey, C.H. Teo, L.W. Choi, W.K. Chim, W.K. Heng, C.L. Lei, Y. Electrical characterization of a trilayer germanium nanocrystal memory device
description	10.1016/S0167-9317(03)00021-2
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ho, V. Tay, M.S. Moey, C.H. Teo, L.W. Choi, W.K. Chim, W.K. Heng, C.L. Lei, Y.
format	Conference or Workshop Item
author	Ho, V. Tay, M.S. Moey, C.H. Teo, L.W. Choi, W.K. Chim, W.K. Heng, C.L. Lei, Y.
author_sort	Ho, V.
title	Electrical characterization of a trilayer germanium nanocrystal memory device
title_short	Electrical characterization of a trilayer germanium nanocrystal memory device
title_full	Electrical characterization of a trilayer germanium nanocrystal memory device
title_fullStr	Electrical characterization of a trilayer germanium nanocrystal memory device
title_full_unstemmed	Electrical characterization of a trilayer germanium nanocrystal memory device
title_sort	electrical characterization of a trilayer germanium nanocrystal memory device
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70123
_version_	1781783140192223232

Electrical characterization of a trilayer germanium nanocrystal memory device

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