AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

10.1109/VLSI-TSA.2012.6210119

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Bibliographic Details
Main Authors: Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Teo, K.L., Chen, K.J., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83450
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83450

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