AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

• Main Authors: Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Teo, K.L., Chen, K.J., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83450
• Institution: National University of Singapore

10.1109/VLSI-TSA.2012.6210119