AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process

AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process

10.1143/APEX.5.066501

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Bibliographic Details
Main Authors: Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81944
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81944

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