AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process

• Main Authors: Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Chen, K.J., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81944
• Institution: National University of Singapore

10.1143/APEX.5.066501