AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process
10.1143/APEX.5.066501
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2014
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sg-nus-scholar.10635-819442023-10-29T22:21:03Z AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Chen, K.J. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1143/APEX.5.066501 Applied Physics Express 5 6 - 2014-10-07T04:23:32Z 2014-10-07T04:23:32Z 2012-06 Article Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2012-06). AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process. Applied Physics Express 5 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.066501 18820778 http://scholarbank.nus.edu.sg/handle/10635/81944 000305134200040 Scopus |
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Asia |
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Singapore Singapore |
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| description |
10.1143/APEX.5.066501 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Chen, K.J. Yeo, Y.-C. |
| format |
Article |
| author |
Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Chen, K.J. Yeo, Y.-C. |
| spellingShingle |
Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Chen, K.J. Yeo, Y.-C. AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| author_sort |
Liu, X. |
| title |
AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| title_short |
AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| title_full |
AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| title_fullStr |
AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| title_full_unstemmed |
AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| title_sort |
algan/gan-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mω·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/81944 |
| _version_ |
1781784023090069504 |