AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

10.1109/VLSI-TSA.2012.6210119

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Main Authors:	Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Teo, K.L., Chen, K.J., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83450
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83450
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spelling	sg-nus-scholar.10635-834502015-01-16T08:04:04Z AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Teo, K.L. Chen, K.J. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSI-TSA.2012.6210119 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - 2014-10-07T04:41:22Z 2014-10-07T04:41:22Z 2012 Conference Paper Liu, X.,Zhan, C.,Chan, K.W.,Liu, W.,Tan, L.S.,Teo, K.L.,Chen, K.J.,Yeo, Y.-C. (2012). AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210119" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210119</a> 9781457720840 19308868 http://scholarbank.nus.edu.sg/handle/10635/83450 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSI-TSA.2012.6210119
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Teo, K.L. Chen, K.J. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Teo, K.L. Chen, K.J. Yeo, Y.-C.
spellingShingle	Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Teo, K.L. Chen, K.J. Yeo, Y.-C. AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
author_sort	Liu, X.
title	AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
title_short	AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
title_full	AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
title_fullStr	AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
title_full_unstemmed	AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
title_sort	algan/gan-on-silicon mos-hemts with breakdown voltage of 800 v and on-state resistance of 3 mω.cm 2 using a cmos-compatible gold-free process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83450
_version_	1681089438042554368

AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

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