PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

• Main Authors: Han, G., Yang, Y., Guo, P., Zhan, C., Low, K.L., Goh, K.H., Liu, B., Toh, E.-H., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84068
• Institution: National University of Singapore

10.1109/VLSI-TSA.2012.6210114