PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

10.1109/VLSI-TSA.2012.6210114

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Main Authors:	Han, G., Yang, Y., Guo, P., Zhan, C., Low, K.L., Goh, K.H., Liu, B., Toh, E.-H., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84068
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84068
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spelling	sg-nus-scholar.10635-840682015-01-08T04:48:06Z PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model Han, G. Yang, Y. Guo, P. Zhan, C. Low, K.L. Goh, K.H. Liu, B. Toh, E.-H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSI-TSA.2012.6210114 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - 2014-10-07T04:48:25Z 2014-10-07T04:48:25Z 2012 Conference Paper Han, G.,Yang, Y.,Guo, P.,Zhan, C.,Low, K.L.,Goh, K.H.,Liu, B.,Toh, E.-H.,Yeo, Y.-C. (2012). PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210114" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210114</a> 9781457720840 19308868 http://scholarbank.nus.edu.sg/handle/10635/84068 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSI-TSA.2012.6210114
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Han, G. Yang, Y. Guo, P. Zhan, C. Low, K.L. Goh, K.H. Liu, B. Toh, E.-H. Yeo, Y.-C.
format	Conference or Workshop Item
author	Han, G. Yang, Y. Guo, P. Zhan, C. Low, K.L. Goh, K.H. Liu, B. Toh, E.-H. Yeo, Y.-C.
spellingShingle	Han, G. Yang, Y. Guo, P. Zhan, C. Low, K.L. Goh, K.H. Liu, B. Toh, E.-H. Yeo, Y.-C. PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
author_sort	Han, G.
title	PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
title_short	PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
title_full	PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
title_fullStr	PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
title_full_unstemmed	PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model
title_sort	pbti characteristics of n-channel tunneling field effect transistor with hfo 2 gate dielectric: new insights and physical model
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84068
_version_	1681089551201730560

PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

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