PBTI characteristics of N-channel tunneling field effect transistor with HfO 2 gate dielectric: New insights and physical model

10.1109/VLSI-TSA.2012.6210114

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Bibliographic Details
Main Authors: Han, G., Yang, Y., Guo, P., Zhan, C., Low, K.L., Goh, K.H., Liu, B., Toh, E.-H., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84068
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Institution: National University of Singapore
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