AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free p...

by Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C.
Published 2014