Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

Digest of Technical Papers - Symposium on VLSI Technology

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Main Authors:	Chin, H.-C., Xiao, G., Xinke, L., Zhe, L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84232
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84232
record_format	dspace
spelling	sg-nus-scholar.10635-842322015-01-08T02:47:33Z Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering Chin, H.-C. Xiao, G. Xinke, L. Zhe, L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Digest of Technical Papers - Symposium on VLSI Technology 244-245 DTPTE 2014-10-07T04:50:19Z 2014-10-07T04:50:19Z 2009 Conference Paper Chin, H.-C.,Xiao, G.,Xinke, L.,Zhe, L.,Yeo, Y.-C. (2009). Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering. Digest of Technical Papers - Symposium on VLSI Technology : 244-245. ScholarBank@NUS Repository. 9784863480094 07431562 http://scholarbank.nus.edu.sg/handle/10635/84232 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Digest of Technical Papers - Symposium on VLSI Technology
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Xiao, G. Xinke, L. Zhe, L. Yeo, Y.-C.
format	Conference or Workshop Item
author	Chin, H.-C. Xiao, G. Xinke, L. Zhe, L. Yeo, Y.-C.
spellingShingle	Chin, H.-C. Xiao, G. Xinke, L. Zhe, L. Yeo, Y.-C. Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
author_sort	Chin, H.-C.
title	Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
title_short	Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
title_full	Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
title_fullStr	Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
title_full_unstemmed	Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
title_sort	strained in0.53ga0.47as n-mosfets: performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84232
_version_	1681089580818759680

Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

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