Strained In0.53Ga0.47As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering

• Main Authors: Chin, H.-C., Xiao, G., Xinke, L., Zhe, L., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84232
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology