Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

10.1109/IEDM.2012.6479053

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Main Authors: Yang, Y., Su, S., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84314
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-843142015-01-12T17:34:42Z Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn) Yang, Y. Su, S. Guo, P. Wang, W. Gong, X. Wang, L. Low, K.L. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2012.6479053 Technical Digest - International Electron Devices Meeting, IEDM 16.3.1-16.3.4 TDIMD 2014-10-07T04:51:15Z 2014-10-07T04:51:15Z 2012 Conference Paper Yang, Y.,Su, S.,Guo, P.,Wang, W.,Gong, X.,Wang, L.,Low, K.L.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn). Technical Digest - International Electron Devices Meeting, IEDM : 16.3.1-16.3.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2012.6479053" target="_blank">https://doi.org/10.1109/IEDM.2012.6479053</a> 9781467348706 01631918 http://scholarbank.nus.edu.sg/handle/10635/84314 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/IEDM.2012.6479053
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yang, Y.
Su, S.
Guo, P.
Wang, W.
Gong, X.
Wang, L.
Low, K.L.
Zhang, G.
Xue, C.
Cheng, B.
Han, G.
Yeo, Y.-C.
format Conference or Workshop Item
author Yang, Y.
Su, S.
Guo, P.
Wang, W.
Gong, X.
Wang, L.
Low, K.L.
Zhang, G.
Xue, C.
Cheng, B.
Han, G.
Yeo, Y.-C.
spellingShingle Yang, Y.
Su, S.
Guo, P.
Wang, W.
Gong, X.
Wang, L.
Low, K.L.
Zhang, G.
Xue, C.
Cheng, B.
Han, G.
Yeo, Y.-C.
Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
author_sort Yang, Y.
title Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
title_short Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
title_full Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
title_fullStr Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
title_full_unstemmed Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
title_sort towards direct band-to-band tunneling in p-channel tunneling field effect transistor (tfet): technology enablement by germanium-tin (gesn)
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84314
_version_ 1681089595780890624

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