Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

10.1109/IEDM.2012.6479053

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Bibliographic Details
Main Authors: Yang, Y., Su, S., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84314
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Institution: National University of Singapore
Description
Summary:10.1109/IEDM.2012.6479053

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