Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

10.1063/1.4805051

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Bibliographic Details
Main Authors:	Yang, Y., Lu Low, K., Wang, W., Guo, P., Wang, L., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82417
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-824172023-10-25T22:04:30Z Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study Yang, Y. Lu Low, K. Wang, W. Guo, P. Wang, L. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.4805051 Journal of Applied Physics 113 19 - JAPIA 2014-10-07T04:29:09Z 2014-10-07T04:29:09Z 2013-05-21 Article Yang, Y., Lu Low, K., Wang, W., Guo, P., Wang, L., Han, G., Yeo, Y.-C. (2013-05-21). Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study. Journal of Applied Physics 113 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4805051 00218979 http://scholarbank.nus.edu.sg/handle/10635/82417 000319295200059 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.4805051
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, Y. Lu Low, K. Wang, W. Guo, P. Wang, L. Han, G. Yeo, Y.-C.
format	Article
author	Yang, Y. Lu Low, K. Wang, W. Guo, P. Wang, L. Han, G. Yeo, Y.-C.
spellingShingle	Yang, Y. Lu Low, K. Wang, W. Guo, P. Wang, L. Han, G. Yeo, Y.-C. Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
author_sort	Yang, Y.
title	Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
title_short	Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
title_full	Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
title_fullStr	Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
title_full_unstemmed	Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
title_sort	germanium-tin n-channel tunneling field-effect transistor: device physics and simulation study
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82417
_version_	1781784132232151040

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

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