Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

10.1063/1.4805051

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Bibliographic Details
Main Authors:	Yang, Y., Lu Low, K., Wang, W., Guo, P., Wang, L., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82417
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Institution:	National University of Singapore

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Summary:	10.1063/1.4805051

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