Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

10.1109/VLSI-TSA.2012.6210151

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Main Authors:	Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83944
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83944
record_format	dspace
spelling	sg-nus-scholar.10635-839442015-01-08T17:32:08Z Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor Wang, L. Han, G. Su, S. Zhou, Q. Yang, Y. Guo, P. Wang, W. Tong, Y. Lim, P.S.Y. Xue, C. Wang, Q. Cheng, B. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSI-TSA.2012.6210151 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - 2014-10-07T04:47:00Z 2014-10-07T04:47:00Z 2012 Conference Paper Wang, L.,Han, G.,Su, S.,Zhou, Q.,Yang, Y.,Guo, P.,Wang, W.,Tong, Y.,Lim, P.S.Y.,Xue, C.,Wang, Q.,Cheng, B.,Yeo, Y.-C. (2012). Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210151" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210151</a> 9781457720840 19308868 http://scholarbank.nus.edu.sg/handle/10635/83944 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSI-TSA.2012.6210151
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, L. Han, G. Su, S. Zhou, Q. Yang, Y. Guo, P. Wang, W. Tong, Y. Lim, P.S.Y. Xue, C. Wang, Q. Cheng, B. Yeo, Y.-C.
format	Conference or Workshop Item
author	Wang, L. Han, G. Su, S. Zhou, Q. Yang, Y. Guo, P. Wang, W. Tong, Y. Lim, P.S.Y. Xue, C. Wang, Q. Cheng, B. Yeo, Y.-C.
spellingShingle	Wang, L. Han, G. Su, S. Zhou, Q. Yang, Y. Guo, P. Wang, W. Tong, Y. Lim, P.S.Y. Xue, C. Wang, Q. Cheng, B. Yeo, Y.-C. Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
author_sort	Wang, L.
title	Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
title_short	Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
title_full	Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
title_fullStr	Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
title_full_unstemmed	Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
title_sort	metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83944
_version_	1681089528594432000

Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

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