Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation

10.1109/LED.2007.901668

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Bibliographic Details
Main Authors:	Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Antimony NiSi Schottky barrier (SB) Segregation
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83106
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83106
record_format	dspace
spelling	sg-nus-scholar.10635-831062024-11-09T07:32:53Z Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation Wong, H.-S. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Antimony NiSi Schottky barrier (SB) Segregation 10.1109/LED.2007.901668 IEEE Electron Device Letters 28 8 703-705 EDLED 2014-10-07T04:37:21Z 2014-10-07T04:37:21Z 2007-08 Article Wong, H.-S., Chan, L., Samudra, G., Yeo, Y.-C. (2007-08). Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation. IEEE Electron Device Letters 28 (8) : 703-705. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.901668 07413106 http://scholarbank.nus.edu.sg/handle/10635/83106 000248315400012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Antimony NiSi Schottky barrier (SB) Segregation
spellingShingle	Antimony NiSi Schottky barrier (SB) Segregation Wong, H.-S. Chan, L. Samudra, G. Yeo, Y.-C. Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
description	10.1109/LED.2007.901668
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wong, H.-S. Chan, L. Samudra, G. Yeo, Y.-C.
format	Article
author	Wong, H.-S. Chan, L. Samudra, G. Yeo, Y.-C.
author_sort	Wong, H.-S.
title	Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
title_short	Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
title_full	Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
title_fullStr	Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
title_full_unstemmed	Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation
title_sort	sub-0.1-ev effective schottky-barrier height for nisi on n-type si (100) using antimony segregation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83106
_version_	1821234306175991808

Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation

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