Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments

• Main Authors: Krishnamoorthy, A., Vairagar, A.V., Yiang, K.Y., Mhaisalkar, S.G., Yoo, W.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Conduction mechanism; Dielectric breakdown; Electromigration; Interconnects; Leakage current; Low-k
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70918
• Institution: National University of Singapore

Advanced Metallization Conference (AMC)