Reliability improvement using buried capping layer in advanced interconnects

• Main Authors: Yiang, K.Y., Mok, T.S., Yoo, W.J., Krishnamoorthy, A.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Conduction mechanism; Dielectric breakdown; Interconnects; Low-k leakage current
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/71607
• Institution: National University of Singapore

Annual Proceedings - Reliability Physics (Symposium)