Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

10.1109/66.857949

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Bibliographic Details
Main Authors: Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Subjects:
Breakdown time
Flash memory devices
Interpoly dielectric
Optimization
Plasma etching
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80991
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80991

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