Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices

• Main Authors: Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.
• Other Authors: MATERIALS SCIENCE
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Amorphous silicon base; Bottom polysilicon layer; Changes in occupancy of interfacial states; Flash memory devices; Negative constant current-stressing; ONO; Positive constant current-stressing; Rough surface; Stack overetch; Trapped fluoride ions
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81391
• Institution: National University of Singapore

10.1117/12.284613