Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices

10.1117/12.284613

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Bibliographic Details
Main Authors:	Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.
Other Authors:	MATERIALS SCIENCE
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Amorphous silicon base Bottom polysilicon layer Changes in occupancy of interfacial states Flash memory devices Negative constant current-stressing ONO Positive constant current-stressing Rough surface Stack overetch Trapped fluoride ions
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81391
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81391
record_format	dspace
spelling	sg-nus-scholar.10635-813912023-10-30T08:18:40Z Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J. MATERIALS SCIENCE ELECTRICAL ENGINEERING Amorphous silicon base Bottom polysilicon layer Changes in occupancy of interfacial states Flash memory devices Negative constant current-stressing ONO Positive constant current-stressing Rough surface Stack overetch Trapped fluoride ions 10.1117/12.284613 Proceedings of SPIE - The International Society for Optical Engineering 3212 368-375 PSISD 2014-10-07T03:07:49Z 2014-10-07T03:07:49Z 1997 Conference Paper Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J. (1997). Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices. Proceedings of SPIE - The International Society for Optical Engineering 3212 : 368-375. ScholarBank@NUS Repository. https://doi.org/10.1117/12.284613 0277786X http://scholarbank.nus.edu.sg/handle/10635/81391 A1997BJ64W00041 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Amorphous silicon base Bottom polysilicon layer Changes in occupancy of interfacial states Flash memory devices Negative constant current-stressing ONO Positive constant current-stressing Rough surface Stack overetch Trapped fluoride ions
spellingShingle	Amorphous silicon base Bottom polysilicon layer Changes in occupancy of interfacial states Flash memory devices Negative constant current-stressing ONO Positive constant current-stressing Rough surface Stack overetch Trapped fluoride ions Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J. Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
description	10.1117/12.284613
author2	MATERIALS SCIENCE
author_facet	MATERIALS SCIENCE Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J.
format	Conference or Workshop Item
author	Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J.
author_sort	Cha, C.L.
title	Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
title_short	Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
title_full	Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
title_fullStr	Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
title_full_unstemmed	Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices
title_sort	constant current-stress induced breakdown of reoxidized nitrided oxide (ono) in flash memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81391
_version_	1781783985966284800

Constant current-stress induced breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices

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