Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

• Main Authors: Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L.
• Other Authors: MATERIALS SCIENCE
• Format: Article
• Published: 2014
• Subjects: Breakdown time; Flash memory devices; Interpoly dielectric; Optimization; Plasma etching
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80991
• Institution: National University of Singapore

10.1109/66.857949