Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

10.1109/66.857949

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Bibliographic Details
Main Authors:	Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80991
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80991
record_format	dspace
spelling	sg-nus-scholar.10635-809912024-11-14T00:58:12Z Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. ELECTRICAL ENGINEERING MATERIALS SCIENCE Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching 10.1109/66.857949 IEEE Transactions on Semiconductor Manufacturing 13 3 386-389 ITSME 2014-10-07T03:03:28Z 2014-10-07T03:03:28Z 2000 Article Cha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Chan, L. (2000). Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices. IEEE Transactions on Semiconductor Manufacturing 13 (3) : 386-389. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/66.857949" target="_blank">https://doi.org/10.1109/66.857949</a> 08946507 http://scholarbank.nus.edu.sg/handle/10635/80991 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching
spellingShingle	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
description	10.1109/66.857949
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L.
format	Article
author	Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L.
author_sort	Cha, C.L.
title	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_short	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_full	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_fullStr	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_full_unstemmed	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_sort	plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80991
_version_	1821231534041989120

Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

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