Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

10.1109/66.857949

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Bibliographic Details
Main Authors:	Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L.
Other Authors:	MATERIALS SCIENCE
Format:	Article
Published:	2014
Subjects:	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80991
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80991
record_format	dspace
spelling	sg-nus-scholar.10635-809912015-01-09T14:26:41Z Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. MATERIALS SCIENCE ELECTRICAL ENGINEERING Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching 10.1109/66.857949 IEEE Transactions on Semiconductor Manufacturing 13 3 386-389 ITSME 2014-10-07T03:03:28Z 2014-10-07T03:03:28Z 2000 Article Cha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Chan, L. (2000). Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices. IEEE Transactions on Semiconductor Manufacturing 13 (3) : 386-389. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/66.857949" target="_blank">https://doi.org/10.1109/66.857949</a> 08946507 http://scholarbank.nus.edu.sg/handle/10635/80991 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching
spellingShingle	Breakdown time Flash memory devices Interpoly dielectric Optimization Plasma etching Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
description	10.1109/66.857949
author2	MATERIALS SCIENCE
author_facet	MATERIALS SCIENCE Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L.
format	Article
author	Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L.
author_sort	Cha, C.L.
title	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_short	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_full	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_fullStr	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_full_unstemmed	Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
title_sort	plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80991
_version_	1681088989753245696

Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

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