Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

• Main Authors: Tang, L.J., Pey, K.L., Tung, C.H., Radhakrishnan, M.K., Lin, W.H.
• 其他作者: INSTITUTE OF MICROELECTRONICS
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: Breakdown; Dielectric-breakdown-induced epitaxy; Gate dielectrics; Gate oxide; MOSFET
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/115430

10.1109/TDMR.2004.824374