Physical analysis of Ti-migration in 33 Å gate oxide breakdown

Annual Proceedings - Reliability Physics (Symposium)

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Bibliographic Details
Main Authors: Pey, K.L., Tung, C.H., Lin, W.H., Radhakrishnan, M.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84095
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Institution: National University of Singapore