Physical analysis of Ti-migration in 33 Å gate oxide breakdown

Annual Proceedings - Reliability Physics (Symposium)

Saved in:

Bibliographic Details
Main Authors:	Pey, K.L., Tung, C.H., Lin, W.H., Radhakrishnan, M.K.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84095
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Description
Summary:	Annual Proceedings - Reliability Physics (Symposium)

Similar Items