Physical analysis of Ti-migration in 33 Å gate oxide breakdown
Annual Proceedings - Reliability Physics (Symposium)
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Main Authors: | Pey, K.L., Tung, C.H., Lin, W.H., Radhakrishnan, M.K. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84095 |
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Institution: | National University of Singapore |
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