Physical analysis of Ti-migration in 33 Å gate oxide breakdown
Annual Proceedings - Reliability Physics (Symposium)
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2014
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sg-nus-scholar.10635-840952015-01-07T12:30:41Z Physical analysis of Ti-migration in 33 Å gate oxide breakdown Pey, K.L. Tung, C.H. Lin, W.H. Radhakrishnan, M.K. ELECTRICAL & COMPUTER ENGINEERING INSTITUTE OF MICROELECTRONICS Annual Proceedings - Reliability Physics (Symposium) 210-215 ARLPB 2014-10-07T04:48:44Z 2014-10-07T04:48:44Z 2002 Conference Paper Pey, K.L.,Tung, C.H.,Lin, W.H.,Radhakrishnan, M.K. (2002). Physical analysis of Ti-migration in 33 Å gate oxide breakdown. Annual Proceedings - Reliability Physics (Symposium) : 210-215. ScholarBank@NUS Repository. 00999512 http://scholarbank.nus.edu.sg/handle/10635/84095 NOT_IN_WOS Scopus |
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National University of Singapore |
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NUS Library |
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Singapore |
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ScholarBank@NUS |
| description |
Annual Proceedings - Reliability Physics (Symposium) |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Pey, K.L. Tung, C.H. Lin, W.H. Radhakrishnan, M.K. |
| format |
Conference or Workshop Item |
| author |
Pey, K.L. Tung, C.H. Lin, W.H. Radhakrishnan, M.K. |
| spellingShingle |
Pey, K.L. Tung, C.H. Lin, W.H. Radhakrishnan, M.K. Physical analysis of Ti-migration in 33 Å gate oxide breakdown |
| author_sort |
Pey, K.L. |
| title |
Physical analysis of Ti-migration in 33 Å gate oxide breakdown |
| title_short |
Physical analysis of Ti-migration in 33 Å gate oxide breakdown |
| title_full |
Physical analysis of Ti-migration in 33 Å gate oxide breakdown |
| title_fullStr |
Physical analysis of Ti-migration in 33 Å gate oxide breakdown |
| title_full_unstemmed |
Physical analysis of Ti-migration in 33 Å gate oxide breakdown |
| title_sort |
physical analysis of ti-migration in 33 å gate oxide breakdown |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84095 |
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1681089556098580480 |