Pre-breakdown charge trapping in ESD stressed thin MOS gate oxides

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Teh, G.L., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72867
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Institution: National University of Singapore