Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance

Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Bibliographic Details
Main Authors: Xu, S., Ren, C., Foo, P.-D., Liu, Y., Su, Y.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Subjects:
Feedback capacitance
VDMOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/112975
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/112975

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