New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications

by Liang, Y.C., Xu, S., Ren, C., Foo, P.-D.
Published 2014

Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance

by Xu, S., Ren, C., Foo, P.-D., Liu, Y., Su, Y.
Published 2014

Folded gate LDMOS with low on-resistance and high transconductance

by Xu, S., Zhu, Y., Foo, P.-D., Liang, Y.C., Sin, J.K.O.
Published 2014

Folded gate LDMOS with low on-resistance and high transconductance

by Xu, S., Zhu, Y., Foo, P.-D., Liang, Y.C., Sin, J.K.O.
Published 2014

Theoretical analysis and experimental characterization of the dummy-gated VDMOSFET

by Xu, S., Ren, C., Liang, Y.C., Foo, P.-D., Sin, J.K.O.
Published 2014

Folded gate LDMOS transistor with low on-resistance and high transconductance

by Zhu, Y., Liang, Y.C., Xu, S., Foo, P.-D., Sin, J.K.O.
Published 2014

Thermal stability of Cu/Ta/ultra low k porous polymer structures for multilevel interconnects

by Zhang, D.H., Yang, L.Y., Li, C.Y., Liu, R., Wee, A.T.S., Foo, P.D.
Published 2014

Comparative study of Ta and TaN(N) in the barrier/ultra low k structures for deep submicron integrated circuits

by Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Wee, A.T.S., Foo, P.D.
Published 2014

Evaluation of the performance of TaN diffusion barrier against copper diffusion using SIMS and AFM

by Teh, W.H., Koh, L.T., Chen, S.M., Xie, J., Li, C.Y., Foo, P.D.
Published 2014

Characterization of Cu/Ta/ultra low-k porous polymer structures for multilevel interconnects

by Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Wee, A.T.S., Foo, P.D.
Published 2014

Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

by Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S.
Published 2014

Study of Cu diffusion in Cu/Tan/SiO2/Si multilayer structures

by Zhang, D.H., Loh, S.W., Li, C.Y., Foo, P.D., Xie, J., Liu, R., Wee, A.T.S., Zhang, L., Lee, Y.K.
Published 2014

MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications

by Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B.
Published 2014

A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

by Yu, X., Zhu, C., Hu, H., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B.
Published 2014

MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics

by Hu, H., Zhu, C., Yu, X., Chin, A., Li, M.F., Cho, B.J., Kwong, D.-L., Foo, P.D., Yu, M.B., Liu, X., Winkler, J.
Published 2014

High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications

by Hu, H., Ding, S.-J., Lim, H.F., Zhu, C., Li, M.F., Kim, S.J., Yu, X.F., Chen, J.H., Yong, Y.F., Cho, B.J., Chan, D.S.H., Rustagi, S.C., Yu, M.B., Tung, C.H., Du, A., My, D., Foo, P.D., Chin, A., Kwong, D.-L.
Published 2014