Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs

Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs

10.1109/VLSIT.2007.4339746

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Bibliographic Details
Main Authors: Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84017
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84017

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