Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
10.1109/VLSIT.2007.4339746
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2014
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sg-nus-scholar.10635-840172023-10-29T23:28:41Z Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ho, C.-S. Hoe, K.-M. Lai, M.Y. Osipowicz, T. Lo, G.-Q. Samudra, G. Chi, D.-Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING PHYSICS 10.1109/VLSIT.2007.4339746 Digest of Technical Papers - Symposium on VLSI Technology 108-109 DTPTE 2014-10-07T04:47:50Z 2014-10-07T04:47:50Z 2007 Conference Paper Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C. (2007). Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs. Digest of Technical Papers - Symposium on VLSI Technology : 108-109. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339746 07431562 http://scholarbank.nus.edu.sg/handle/10635/84017 000250539900042 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
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| description |
10.1109/VLSIT.2007.4339746 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ho, C.-S. Hoe, K.-M. Lai, M.Y. Osipowicz, T. Lo, G.-Q. Samudra, G. Chi, D.-Z. Yeo, Y.-C. |
| format |
Conference or Workshop Item |
| author |
Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ho, C.-S. Hoe, K.-M. Lai, M.Y. Osipowicz, T. Lo, G.-Q. Samudra, G. Chi, D.-Z. Yeo, Y.-C. |
| spellingShingle |
Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Ho, C.-S. Hoe, K.-M. Lai, M.Y. Osipowicz, T. Lo, G.-Q. Samudra, G. Chi, D.-Z. Yeo, Y.-C. Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs |
| author_sort |
Lee, R.T.P. |
| title |
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs |
| title_short |
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs |
| title_full |
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs |
| title_fullStr |
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs |
| title_full_unstemmed |
Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs |
| title_sort |
novel epitaxial nickel aluminide-silicide with low schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain n-channel mugfets |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84017 |
| _version_ |
1781784413799972864 |